Single IGBTs

Manufacturer Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device 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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT20N135SRA,S1E Toshiba Semiconductor and Storage

GT20N135SRA,S1E

IGBT 1350V 40A TO247

Toshiba Semiconductor and Storage

2,778
RFQ
GT20N135SRA,S1E Datasheet

Datasheet

- TO-247-3 Tube Active - 1350 V 40 A 80 A 2.4V @ 15V, 40A 312 W -, 700µJ (off) Standard 185 nC - 300V, 40A, 39Ohm, 15V - 175°C (TJ) - - Through Hole TO-247
GT50J341,Q Toshiba Semiconductor and Storage

GT50J341,Q

PB-F IGBT / TRANSISTOR TO-3PN IC

Toshiba Semiconductor and Storage

9,345
RFQ
GT50J341,Q Datasheet

Datasheet

- TO-3P-3, SC-65-3 Tray Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 200 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
GT50JR22(STA1,E,S) Toshiba Semiconductor and Storage

GT50JR22(STA1,E,S)

PB-F IGBT / TRANSISTOR TO-3PN(OS

Toshiba Semiconductor and Storage

8,289
RFQ
GT50JR22(STA1,E,S) Datasheet

Datasheet

- TO-3P-3, SC-65-3 Tube Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) - - Through Hole TO-3P(N)
GT30J341,Q Toshiba Semiconductor and Storage

GT30J341,Q

IGBT 600V 59A TO3P

Toshiba Semiconductor and Storage

5,884
RFQ
GT30J341,Q Datasheet

Datasheet

- TO-3P-3, SC-65-3 Tray Last Time Buy - 600 V 59 A 120 A 2V @ 15V, 30A 230 W 800µJ (on), 600µJ (off) Standard - 80ns/280ns 300V, 30A, 24Ohm, 15V 50 ns 175°C (TJ) - - Through Hole TO-3P(N)
GT10G131(TE12L,Q) Toshiba Semiconductor and Storage

GT10G131(TE12L,Q)

IGBT 400V 1W 8-SOIC

Toshiba Semiconductor and Storage

3,282
RFQ
GT10G131(TE12L,Q) Datasheet

Datasheet

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete - 400 V - 200 A 2.3V @ 4V, 200A 1 W - Standard - 3.1µs/2µs - - 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
GT10J312(Q) Toshiba Semiconductor and Storage

GT10J312(Q)

IGBT 600V 10A 60W TO220SM

Toshiba Semiconductor and Storage

3,973
RFQ
GT10J312(Q) Datasheet

Datasheet

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete - 600 V 10 A 20 A 2.7V @ 15V, 10A 60 W - Standard - 400ns/400ns 300V, 10A, 100Ohm, 15V 200 ns 150°C (TJ) - - Through Hole -
GT60N321(Q) Toshiba Semiconductor and Storage

GT60N321(Q)

IGBT 1000V 60A 170W TO3P LH

Toshiba Semiconductor and Storage

8,017
RFQ

-

- TO-3PL Tube Obsolete - 1000 V 60 A 120 A 2.8V @ 15V, 60A 170 W - Standard - 330ns/700ns - 2.5 µs 150°C (TJ) - - Through Hole TO-3P(LH)
GT8G133(TE12L,Q) Toshiba Semiconductor and Storage

GT8G133(TE12L,Q)

IGBT 400V 600MW 8TSSOP

Toshiba Semiconductor and Storage

2,169
RFQ
GT8G133(TE12L,Q) Datasheet

Datasheet

- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete - 400 V - 150 A 2.9V @ 4V, 150A 600 mW - Standard - 1.7µs/2µs - - 150°C (TJ) - - Surface Mount 8-TSSOP
GT50J121(Q) Toshiba Semiconductor and Storage

GT50J121(Q)

IGBT 600V 50A 240W TO3P LH

Toshiba Semiconductor and Storage

8,794
RFQ

-

- TO-3PL Tube Obsolete - 600 V 50 A 100 A 2.45V @ 15V, 50A 240 W 1.3mJ (on), 1.34mJ (off) Standard - 90ns/300ns 300V, 50A, 13Ohm, 15V - 150°C (TJ) - - Through Hole TO-3P(LH)
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