Single Diodes

Manufacturer Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - 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Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
SF1004G Taiwan Semiconductor Corporation

SF1004G

DIODE GEN PURP 200V 10A TO220AB

Taiwan Semiconductor Corporation

7,418
RFQ
SF1004G Datasheet

Datasheet

- TO-220-3 Tube Discontinued at Digi-Key Standard 200 V 10A 975 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 70pF @ 4V, 1MHz - - Through Hole TO-220AB -55°C ~ 150°C
SF1004GHC0G Taiwan Semiconductor Corporation

SF1004GHC0G

DIODE GEN PURP 200V 10A TO220AB

Taiwan Semiconductor Corporation

8,151
RFQ
SF1004GHC0G Datasheet

Datasheet

- TO-220-3 Tube Active Standard 200 V 10A 975 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 70pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF1005GHC0G Taiwan Semiconductor Corporation

SF1005GHC0G

DIODE GEN PURP 300V 10A TO220AB

Taiwan Semiconductor Corporation

8,502
RFQ
SF1005GHC0G Datasheet

Datasheet

- TO-220-3 Tube Active Standard 300 V 10A 1.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF1007GHC0G Taiwan Semiconductor Corporation

SF1007GHC0G

DIODE GEN PURP 500V 10A TO220AB

Taiwan Semiconductor Corporation

8,057
RFQ
SF1007GHC0G Datasheet

Datasheet

- TO-220-3 Tube Discontinued at Digi-Key Standard 500 V 10A 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 500 V 50pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF1601G C0G Taiwan Semiconductor Corporation

SF1601G C0G

DIODE GEN PURP 50V 16A TO220AB

Taiwan Semiconductor Corporation

4,779
RFQ
SF1601G C0G Datasheet

Datasheet

- TO-220-3 Tube Active Standard 50 V 16A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V 80pF @ 4V, 1MHz - - Through Hole TO-220AB -55°C ~ 150°C
SF1603G C0G Taiwan Semiconductor Corporation

SF1603G C0G

DIODE GEN PURP 150V 16A TO220AB

Taiwan Semiconductor Corporation

5,725
RFQ
SF1603G C0G Datasheet

Datasheet

- TO-220-3 Tube Active Standard 150 V 16A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 80pF @ 4V, 1MHz - - Through Hole TO-220AB -55°C ~ 150°C
SF1603PT C0G Taiwan Semiconductor Corporation

SF1603PT C0G

DIODE GEN PURP 150V 16A TO247AD

Taiwan Semiconductor Corporation

4,287
RFQ
SF1603PT C0G Datasheet

Datasheet

- TO-247-3 Tube Active Standard 150 V 16A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 85pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF1604PTHC0G Taiwan Semiconductor Corporation

SF1604PTHC0G

DIODE GEN PURP 200V 16A TO247AD

Taiwan Semiconductor Corporation

2,260
RFQ
SF1604PTHC0G Datasheet

Datasheet

- TO-247-3 Tube Active Standard 200 V 16A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 85pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF1608GHC0G Taiwan Semiconductor Corporation

SF1608GHC0G

DIODE GEN PURP 600V 16A TO220AB

Taiwan Semiconductor Corporation

4,440
RFQ
SF1608GHC0G Datasheet

Datasheet

- TO-220-3 Tube Active Standard 600 V 16A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF1608PT C0G Taiwan Semiconductor Corporation

SF1608PT C0G

DIODE GEN PURP 600V 16A TO247AD

Taiwan Semiconductor Corporation

5,420
RFQ
SF1608PT C0G Datasheet

Datasheet

- TO-247-3 Tube Active Standard 600 V 16A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 85pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
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