FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Results:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GC11N65FN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
133 | - |
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Datasheet |
SuperJunction | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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G110N06KN60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Goford Semiconductor |
12,202 | - |
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Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 4A, 10V | 2.5V @ 250µA | 113 nC @ 10 V | ±20V | 5538 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G075N06MIN60V, 110A,RD<7M@10V,VTH1.0V~4.0 Goford Semiconductor |
747 | - |
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Datasheet |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 10V | 7mOhm @ 20A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 6443 pF @ 30 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G75P04MMOSFET P-CH 40V 80A TO-263 Goford Semiconductor |
625 | - |
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Datasheet |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ -30A, -10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6516 pF @ 20 V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT52N10TN100V,RD(MAX)<9M@10V,RD(MAX)<15M Goford Semiconductor |
138 | - |
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Datasheet |
SGT | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 9mOhm @ 50A, 10V | 3V @ 250µA | 35 nC @ 10 V | ±20V | 2273 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT065P06TP-60V,-82A,RD(MAX)<7.5M@-10V,VTH Goford Semiconductor |
212 | - |
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Datasheet |
SGT | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 82A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 5335 pF @ 30 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT400P10MMOSFET P-CH 100V 35A TO-263 Goford Semiconductor |
783 | - |
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Datasheet |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 3073 pF @ 50 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT1K2P15D5MOSFET P-CH 150V 27A 130W 110M(M Goford Semiconductor |
3,304 | - |
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- |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V, 4.5V | 110mOhm @ 15A, 10V | 3V @ 250µA | 80 nC @ 10 V | 20V | 3213 pF @ 75 V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G900P15KP-150V,-50A,RD(MAX)<80M@-10V,VTH Goford Semiconductor |
820 | - |
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Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 35A (Tc) | 10V | 80mOhm @ 5A, 10V | 4V @ 250µA | 27 nC @ 4.5 V | ±20V | 3918 pF @ 75 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G080N10TMOSFET N-CH 100V 180A TO-220 Goford Semiconductor |
114 | - |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.5V @ 250µA | 107 nC @ 4.5 V | ±20V | 13912 pF @ 50 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |