FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reset All
Apply All
Results:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G33N03SN30V,RD(MAX)<12M@10V,RD(MAX)<13M Goford Semiconductor |
3,930 | - |
|
Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Tc) | 4.5V, 10V | 12mOhm @ 8A, 10V | 1.1V @ 250µA | 13 nC @ 15 V | ±20V | 1550 pF @ 15 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
|
G10N03SN30V,RD(MAX)<12M@10V,RD(MAX)<16M Goford Semiconductor |
3,500 | - |
|
Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Tc) | 4.5V, 10V | 9mOhm @ 6A, 10V | 2.5V @ 250µA | 17 nC @ 4.5 V | ±20V | 832 pF @ 15 V | - | 2.23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
|
G7P03SP30V,RD(MAX)<22M@-10V,RD(MAX)<33 Goford Semiconductor |
3,454 | - |
|
Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 22mOhm @ 3A, 10V | 2V @ 250µA | 24.5 nC @ 10 V | ±20V | 1253 pF @ 15 V | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
G2012N20V,RD(MAX)<[email protected],RD(MAX)<18 Goford Semiconductor |
2,944 | - |
|
Datasheet |
TrenchFET® | 6-WDFN Exposed Pad | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Tc) | 2.5V, 4.5V | 12mOhm @ 5A, 4.5V | 1V @ 250µA | 29 nC @ 10 V | ±10V | 1255 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |
|
G3K8N15KEMOSFET N-CH ESD 150V 6A TO-252 Goford Semiconductor |
2,450 | - |
|
Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 6A (Tc) | 4.5V, 10V | 370mOhm @ 2A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 549 pF @ 75 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
|
G11SP-20V,RD(MAX)<[email protected],RD(MAX Goford Semiconductor |
1,660 | - |
|
Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 11A (Tc) | 2.5V, 4.5V | 18.4mOhm @ 1A, 4.5V | 1.1V @ 250µA | 47 nC @ 10 V | ±12V | 2470 pF @ 10 V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
|
G2014N20V,RD(MAX)<[email protected],RD(MAX)<11M Goford Semiconductor |
2,940 | - |
|
Datasheet |
TrenchFET® | 6-WDFN Exposed Pad | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 14A (Tc) | 2.5V, 10V | 7mOhm @ 5A, 10V | 900mV @ 250µA | 17.5 nC @ 4.5 V | ±12V | 1710 pF @ 10 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |
|
|
GT6K2P10KHMOSFET P-CH 100V 4.3A TO-252 Goford Semiconductor |
2,310 | - |
|
Datasheet |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 670mOhm @ 1A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±20V | 247 pF @ 50 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
G35N02KN20V,RD(MAX)<[email protected],RD(MAX)<18 Goford Semiconductor |
1,769 | - |
|
Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 2.5V, 4.5V | 9mOhm @ 20A, 4.5V | 1.2V @ 250µA | 24 nC @ 4.5 V | ±12V | 1380 pF @ 10 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
G28N03D3N30V,RD(MAX)<12M@10V,RD(MAX)<18M Goford Semiconductor |
5,000 | - |
|
Datasheet |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Tc) | 4.5V, 10V | 12mOhm @ 16A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 896 pF @ 15 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |