FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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SIHG039N60E-GE3MOSFET N-CH 600V 63A TO247AC |
500 | - |
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Datasheet |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 63A (Tc) | 10V | 39mOhm @ 32A, 10V | 5V @ 250µA | 126 nC @ 10 V | ±30V | 4369 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIHG80N60EF-GE3MOSFET N-CH 600V 80A TO247AC |
460 | - |
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Datasheet |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 80A (Tc) | 10V | 32mOhm @ 40A, 10V | 4V @ 250µA | 400 nC @ 10 V | ±30V | 6600 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IXTH10P60MOSFET P-CH 600V 10A TO247 |
258 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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IXFH36N60PMOSFET N-CH 600V 36A TO247AD |
626 | - |
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Datasheet |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 18A, 10V | 5V @ 4mA | 102 nC @ 10 V | ±30V | 5800 pF @ 25 V | - | 650W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXTT24P20MOSFET P-CH 200V 24A TO268 |
182 | - |
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Datasheet |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 110mOhm @ 500mA, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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SCT3120AW7TLSICFET N-CH 650V 21A TO263-7 |
788 | - |
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Datasheet |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | - | 156mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38 nC @ 18 V | +22V, -4V | 460 pF @ 500 V | - | 100W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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GP2T080A120HSIC MOSFET 1200V 80M TO-247-4L |
132 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 61 nC @ 20 V | +25V, -10V | 1377 pF @ 1000 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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IXFH50N30Q3MOSFET N-CH 300V 50A TO247AD |
1,803 | - |
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Datasheet |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 50A (Tc) | 10V | 80mOhm @ 25A, 10V | 6.5V @ 4mA | 65 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXTT360N055T2MOSFET N-CH 55V 360A TO268 |
730 | - |
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Datasheet |
TrenchT2™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 360A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 250µA | 330 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFH18N90PMOSFET N-CH 900V 18A TO247AD |
840 | - |
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Datasheet |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 18A (Tc) | 10V | 600mOhm @ 500mA, 10V | 6.5V @ 1mA | 97 nC @ 10 V | ±30V | 5230 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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NTH4L045N065SC1SILICON CARBIDE MOSFET, NCHANNEL |
181 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 55A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1870 pF @ 325 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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STW72N60DM2AGMOSFET N-CH 600V 66A TO247 |
528 | - |
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Datasheet |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 66A (Tc) | 10V | 42mOhm @ 33A, 10V | 5V @ 250µA | 121 nC @ 10 V | ±25V | 5508 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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IXFT340N075T2MOSFET N-CH 75V 340A TO268 |
459 | - |
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Datasheet |
HiPerFET™, TrenchT2™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 340A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 3mA | 300 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFH120N20PMOSFET N-CH 200V 120A TO247AD |
302 | - |
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Datasheet |
HiPerFET™, Polar | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | 10V | 22mOhm @ 500mA, 10V | 5V @ 4mA | 152 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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LSIC1MO120E0160SICFET N-CH 1200V 22A TO247-3 |
2,289 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 20V | 200mOhm @ 10A, 20V | 4V @ 5mA | 57 nC @ 20 V | +22V, -6V | 870 pF @ 800 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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NTHL050N65S3HFMOSFET N-CH 650V 58A TO247-3 |
389 | - |
|
Datasheet |
FRFET®, SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 125 nC @ 10 V | ±30V | 5017 pF @ 400 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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SCT3160KLHRC11SICFET N-CH 1200V 17A TO247N |
592 | - |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | 103W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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IXFK44N50PMOSFET N-CH 500V 44A TO264AA |
260 | - |
|
Datasheet |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 4mA | 98 nC @ 10 V | ±30V | 5440 pF @ 25 V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXTP94N20X4MOSFET 200V 94A N-CH ULTRA TO220 |
163 | - |
|
Datasheet |
Ultra X4 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 94A (Tc) | 10V | 10.6mOhm @ 47A, 10V | 4.5V @ 250µA | 77 nC @ 10 V | ±20V | 5050 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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SCTW40N120G2VSILICON CARBIDE POWER MOSFET 120 |
555 | - |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +22V, -10V | 1233 pF @ 800 V | - | 278W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ |
FETs, MOSFETs Electronic Components Sourcing and Lifecycle Support
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
How FPGAX Supports FETs, MOSFETs Requirements
- Active component sourcing: support for current FPGA, programmable logic, and related semiconductor requirements.
- End-of-life sourcing: assistance with obsolete and hard-to-find parts when designs must remain in production.
- Lifecycle management: sourcing support during product transitions, allocation periods, and supply interruptions.
- Design continuity: long-term supply support intended to reduce redesign pressure and production disruption.
- Major programmable logic brands: sourcing coverage includes Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic.
Supply Support at a Glance
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
Focused on FPGA and Programmable Logic Supply
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
FETs, MOSFETs FAQ
Can FPGAX source both active and end-of-life FETs, MOSFETs components?
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Which programmable logic manufacturers does FPGAX support?
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
How does FPGAX help with component lifecycle changes?
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
What quality and traceability standards does FPGAX follow?
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
What information should I provide for a FETs, MOSFETs sourcing request?
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.