| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPI80N03S2L-04MOSFET N-CH 30V 80A TO262-3 |
7,882 | - |
|
Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 4.2mOhm @ 80A, 10V | 2V @ 130µA | 105 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
STD150NH02L-1MOSFET N-CH 24V 150A IPAK |
6,043 | - |
|
Datasheet |
STripFET™ III | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 150A (Tc) | 5V, 10V | 3.5mOhm @ 75A, 10V | 1.8V @ 250µA | 93 nC @ 10 V | ±20V | 4450 pF @ 15 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
STD6NM60N-1MOSFET N-CH 600V 4.6A IPAK |
4,571 | - |
|
Datasheet |
MDmesh™ II | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.6A (Tc) | 10V | 920mOhm @ 2.3A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±25V | 420 pF @ 50 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
|
ISC0604NLSATMA1TRENCH 40<-<100V |
2,726 | - |
|
Datasheet |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 22A (Ta), 166A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2.3V @ 103µA | 78 nC @ 10 V | ±20V | 6800 pF @ 40 V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
|
AONV420A70LINEAR IC |
5,917 | - |
|
- |
aMOS5™ | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 2.8A (Ta), 12A (Tc) | 10V | 420mOhm @ 6A, 10V | 4.6V @ 250µA | 21.5 nC @ 10 V | ±20V | 1360 pF @ 100 V | - | 8.3W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-DFN (8x8) |
|
IRFZ44ESTRRMOSFET N-CH 60V 48A D2PAK |
3,407 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFZ44ESTRLMOSFET N-CH 60V 48A D2PAK |
5,284 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IXTU05N120MOSFET N-CH 1200V 500MA TO251 |
6,201 | - |
|
- |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 500mA (Tc) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-251AA |
|
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SUP53P06-20-GE3MOSFET P-CH 60V 9.2A/53A TO220AB |
5,152 | - |
|
Datasheet |
TrenchFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 9.2A (Ta), 53A (Tc) | 4.5V, 10V | 19.5mOhm @ 30A, 10V | 3V @ 250µA | 115 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 3.1W (Ta), 104.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF7433MOSFET P-CH 12V 8.9A 8SO |
5,159 | - |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8.9A (Ta) | 1.8V, 4.5V | 24mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20 nC @ 4.5 V | ±8V | 1877 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF3709SMOSFET N-CH 30V 90A D2PAK |
8,340 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
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AON6162MOSFET N-CHANNEL 60V 100A 8DFN |
8,224 | - |
|
Datasheet |
AlphaSGT™ | 8-PowerSMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 6V, 10V | 2.1mOhm @ 20A, 10V | 3.2V @ 250µA | 100 nC @ 10 V | ±20V | 4850 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
|
IRL2203NSTRRPBFMOSFET N-CH 30V 116A D2PAK |
6,098 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFR3910CPBFMOSFET N-CH 100V 16A DPAK |
3,819 | - |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRLZ14LMOSFET N-CH 60V 10A TO262-3 |
6,801 | - |
|
Datasheet |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 4V, 5V | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262-3 |
|
|
STP4NB100MOSFET N-CH 1000V 3.8A TO220AB |
4,548 | - |
|
Datasheet |
PowerMESH™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.8A (Tc) | 10V | 4.4Ohm @ 2A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 125W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
IRF6665TR1MOSFET N-CH 100V 4.2A DIRECTFET |
8,337 | - |
|
Datasheet |
- | DirectFET™ Isometric SH | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SH |
|
SIHB6N80E-GE3MOSFET N-CH 800V 5.4A D2PAK |
2,041 | - |
|
Datasheet |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IPB80P03P4L07ATMA1MOSFET P-CH 30V 80A TO263-3 |
7,196 | - |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 6.9mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRFD210MOSFET N-CH 200V 600MA 4DIP |
3,859 | - |
|
Datasheet |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 600mA (Ta) | 10V | 1.5Ohm @ 360mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.