FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Results:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7811MOSFET N-CH 28V 14A 8SO Infineon Technologies |
3,577 | - |
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Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 14A (Ta) | 4.5V | 11mOhm @ 15A, 4.5V | 1V @ 250µA | 23 nC @ 5 V | ±12V | 1800 pF @ 16 V | - | 3.5W (Ta) | - | - | - | Surface Mount | 8-SO |
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IPTG025N10NM5ATMA1TRENCH >=100V PG-HSOG-8 Infineon Technologies |
4,794 | - |
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Datasheet |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Ta), 206A (Tc) | 6V, 10V | 2.5mOhm @ 150A 10V | 3.8V @ 158µA | 120 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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IRFIZ46NMOSFET N-CH 55V 33A TO220AB FP Infineon Technologies |
5,057 | - |
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Datasheet |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 33A (Tc) | 10V | 20mOhm @ 19A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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SPP100N06S2L-05MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
3,984 | - |
|
Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 7530 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPD18P06PMOSFET P-CH 60V 18.6A TO252-3 Infineon Technologies |
9,595 | - |
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Datasheet |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 18.6A (Tc) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 33 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD5N03LAGMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
2,689 | - |
|
Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 50A, 10V | 2V @ 35µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IRFH7932TR2PBFMOSFET N-CH 30V 24A PQFN56 Infineon Technologies |
5,747 | - |
|
Datasheet |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 104A (Tc) | - | 3.3mOhm @ 25A, 10V | 2.35V @ 100µA | 51 nC @ 4.5 V | - | 4270 pF @ 15 V | - | 3.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) Single Die |
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IPI06CN10N GMOSFET N-CH 100V 100A TO262-3 Infineon Technologies |
8,483 | - |
|
Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 6.5mOhm @ 100A, 10V | 4V @ 180µA | 139 nC @ 10 V | ±20V | 9200 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI60R165CPAKSA1MOSFET N-CH 650V 21A TO262-3 Infineon Technologies |
5,625 | - |
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Datasheet |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IRL2505STRLMOSFET N-CH 55V 104A D2PAK Infineon Technologies |
3,515 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |