FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Results:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH5004TRPBFMOSFET N-CH 40V 28A/100A 8PQFN Infineon Technologies |
5,225 | - |
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Datasheet |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 28A (Ta), 100A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±20V | 4490 pF @ 20 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFU1010ZMOSFET N-CH 55V 42A IPAK Infineon Technologies |
5,013 | - |
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Datasheet |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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BSO033N03MSGXUMA1MOSFET N-CH 30V 17A 8DSO Infineon Technologies |
3,434 | - |
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Datasheet |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta) | 4.5V, 10V | 3.3mOhm @ 22A, 10V | 2V @ 250µA | 124 nC @ 10 V | ±20V | 9600 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IRFH5006TRPBFMOSFET N-CH 60V 21A/100A 8PQFN Infineon Technologies |
5,783 | - |
|
Datasheet |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Ta), 100A (Tc) | 10V | 4.1mOhm @ 50A, 10V | 4V @ 150µA | 100 nC @ 10 V | ±20V | 4175 pF @ 30 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFH5007TRPBFMOSFET N-CH 75V 17A/100A 8PQFN Infineon Technologies |
9,666 | - |
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Datasheet |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 17A (Ta), 100A (Tc) | 10V | 5.9mOhm @ 50A, 10V | 4V @ 150µA | 98 nC @ 10 V | ±20V | 4290 pF @ 25 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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GS-065-011-6-LR-TRGS-065-011-6-LR-TR Infineon Technologies Canada Inc. |
4,780 | - |
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- | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 12.2A (Tc) | 6V | 180mOhm @ 3.2A, 6V | 2.6V @ 2.4mA | 2.2 nC @ 6 V | +7V, -10V | 70 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (8x8) |
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SPA20N65C3XKSA1MOSFET N-CH 650V 20.7A TO220-3 Infineon Technologies |
3,513 | - |
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Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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SPA20N60CFDXKSA1MOSFET N-CH 600V 20.7A TO220-FP Infineon Technologies |
4,995 | - |
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Datasheet |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IRLL3303TRMOSFET N-CH 30V 4.6A SOT223 Infineon Technologies |
3,940 | - |
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Datasheet |
HEXFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | 1V @ 250µA | 50 nC @ 10 V | ±16V | 840 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IPB60R520CPATMA1MOSFET N-CH 600V 6.8A D2PAK Infineon Technologies |
9,569 | - |
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Datasheet |
CoolMOS™ CP | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 31 nC @ 10 V | ±20V | 630 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |