| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHG24N65E-E3MOSFET N-CH 650V 24A TO247AC |
9,023 | - |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
RFP4N100MOSFET N-CH 1000V 4.3A TO220-3 |
5,259 | - |
|
Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4.3A (Tc) | - | 3.5Ohm @ 2.5A, 10V | 4V @ 250µA | 120 nC @ 20 V | - | - | - | - | - | - | - | Through Hole | TO-220-3 |
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IRFBG20MOSFET N-CH 1000V 1.4A TO220AB |
5,227 | - |
|
Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.4A (Tc) | 10V | 11Ohm @ 840mA, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF9630SMOSFET P-CH 200V 6.5A D2PAK |
8,361 | - |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFBC20SMOSFET N-CH 600V 2.2A D2PAK |
8,122 | - |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRF9630STRLMOSFET P-CH 200V 6.5A D2PAK |
5,530 | - |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 6.5A (Tc) | 10V | 800mOhm @ 3.9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFIZ44GMOSFET N-CH 60V 30A TO220-3 |
9,283 | - |
|
Datasheet |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 28mOhm @ 18A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
BUK661R6-30C,118MOSFET N-CH 30V 120A D2PAK |
1,013 | - |
|
Datasheet |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 10V | 1.6mOhm @ 25A, 10V | 2.8V @ 1mA | 229 nC @ 10 V | ±16V | 14964 pF @ 25 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
|
FDS5170N7MOSFET N-CH 60V 10.6A 8SO |
3,827 | - |
|
Datasheet |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 10.6A (Ta) | 6V, 10V | 12mOhm @ 10.6A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 2889 pF @ 30 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO FLMP |
|
STD60N55F3MOSFET N-CH 55V 80A DPAK |
5,284 | - |
|
Datasheet |
STripFET™ III | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8.5mOhm @ 32A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
IRLR7843CTRPBFMOSFET N-CH 30V 161A DPAK |
4,939 | - |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4380 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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FQB10N50CFTM-WSMOSFET N-CH 500V 10A D2PAK |
6,844 | - |
|
Datasheet |
FRFET®, QFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 610mOhm @ 5A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 2210 pF @ 25 V | - | 143W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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AOB11S65LMOSFET N-CH 650V 11A TO263 |
9,405 | - |
|
Datasheet |
aMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 399mOhm @ 5.5A, 10V | 4V @ 250µA | 13.2 nC @ 10 V | ±30V | 646 pF @ 100 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
BUK762R9-40E,118MOSFET N-CH 40V 100A D2PAK |
8,491 | - |
|
Datasheet |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.9mOhm @ 25A, 10V | 4V @ 1mA | 79 nC @ 10 V | ±20V | 6200 pF @ 25 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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IRFH7885TRPBFMOSFET N-CH 80V 22A 8PQFN |
4,243 | - |
|
Datasheet |
FASTIRFET™ | 8-VQFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 22A (Ta) | 10V | 3.9mOhm @ 50A, 10V | 3.6V @ 150µA | 54 nC @ 10 V | ±20V | 2311 pF @ 40 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IRF1010ELMOSFET N-CH 60V 84A TO262 |
9,743 | - |
|
Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IXTA180N10T7MOSFET N-CH 100V 180A TO263-7 |
9,984 | - |
|
Datasheet |
Trench | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 (IXTA) |
|
|
IXFA102N15TMOSFET N-CH 150V 102A TO263 |
2,694 | - |
|
Datasheet |
HiPerFET™, Trench | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 102A (Tc) | 10V | 18mOhm @ 500mA, 10V | 5V @ 1mA | 87 nC @ 10 V | ±20V | 5220 pF @ 25 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AA (IXFA) |
|
BFL4026MOSFET N-CH 900V 3.5A TO220FI |
5,516 | - |
|
Datasheet |
- | TO-220-3 Full Pack | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 3.5A (Ta) | 10V | 3.6Ohm @ 2.5A, 10V | - | 33 nC @ 10 V | ±30V | 650 pF @ 30 V | - | 2W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FI(LS) |
|
TSM70N600ACL700V, 8A, SINGLE N-CHANNEL POWER |
9,502 | - |
|
- |
- | TO-262-3 Short Leads, I2PAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262S (I2PAK SL) |
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.