| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STB25NM60N-1MOSFET N-CH 600V 21A I2PAK |
4,914 | - |
|
Datasheet |
MDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2400 pF @ 50 V | - | 160W (Tc) | 150°C (TJ) | - | - | Through Hole | I2PAK |
|
STW52N60DM6DISCRETE |
2,587 | - |
|
- |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 74mOhm @ 22.5A, 10V | 4.75V @ 250µA | 52 nC @ 10 V | ±25V | 2468 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
BTS282ZE3180AATMA2MOSFET N-CH 49V 80A TO263-7 |
4,192 | - |
|
Datasheet |
TEMPFET® | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 49 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 36A, 10V | 2V @ 240µA | 232 nC @ 10 V | ±20V | 4800 pF @ 25 V | Temperature Sensing Diode | 300W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-1 |
|
AUIRFS4115TRLMOSFET N-CH 150V 99A D2PAK |
3,202 | - |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 150 V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
TSM60NB190CZ600V, 18A, SINGLE N-CHANNEL POWE |
9,432 | - |
|
- |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 150.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
STB50N65DM6MOSFET N-CH 650V 33A D2PAK |
3,554 | - |
|
Datasheet |
MDmesh™ DM6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 91mOhm @ 16.5A, 10V | 4.75V @ 250µA | 52.5 nC @ 10 V | ±25V | 2300 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
STW25NM60NMOSFET N-CH 600V 21A TO247-3 |
3,477 | - |
|
Datasheet |
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2400 pF @ 50 V | - | 160W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
SPB11N60S5ATMA1MOSFET N-CH 600V 11A TO263-3 |
4,723 | - |
|
Datasheet |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
SPB80N10L GMOSFET N-CH 100V 80A TO263-3 |
3,186 | - |
|
Datasheet |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
FDB8443MOSFET N-CH 40V 25A/120A TO263AB |
7,761 | - |
|
Datasheet |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 25A (Ta), 120A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±20V | 9310 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
STH110N10F7-6MOSFET N-CH 100V 110A H2PAK-6 |
3,249 | - |
|
Datasheet |
DeepGATE™, STripFET™ VII | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 6.5mOhm @ 55A, 10V | 4.5V @ 250µA | 72 nC @ 10 V | ±20V | 5117 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-6 |
|
IXTH102N15TMOSFET N-CH 150V 102A TO247 |
6,959 | - |
|
Datasheet |
Trench | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 102A (Tc) | 10V | 18mOhm @ 500mA, 10V | 5V @ 1mA | 87 nC @ 10 V | ±20V | 5220 pF @ 25 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
IXTH86N20TMOSFET N-CH 200V 86A TO247 |
7,050 | - |
|
- |
Trench | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 86A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) |
|
IXTQ86N25TMOSFET N-CH 250V 86A TO3P |
4,373 | - |
|
Datasheet |
Trench | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 86A (Tc) | 10V | 37mOhm @ 43A, 10V | 5V @ 1mA | 105 nC @ 10 V | ±30V | 5330 pF @ 25 V | - | 540W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
NTB30N20T4GMOSFET N-CH 200V 30A D2PAK |
6,715 | - |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 30A (Ta) | 10V | 81mOhm @ 15A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±30V | 2335 pF @ 25 V | - | 2W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRL540STRLPBFMOSFET N-CH 100V 28A D2PAK |
2,456 | - |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64 nC @ 5 V | ±10V | 2200 pF @ 25 V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
STD11NM60NMOSFET N-CH 600V 10A DPAK |
6,138 | - |
|
Datasheet |
MDmesh™ II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 450mOhm @ 5A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±25V | 850 pF @ 50 V | - | 90W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
|
HAT2169H-EL-EMOSFET N-CH 40V 50A LFPAK |
5,322 | - |
|
Datasheet |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Ta) | 4.5V, 10V | 3.5mOhm @ 25A, 10V | 2.5V @ 1mA | 45 nC @ 4.5 V | ±20V | 6650 pF @ 10 V | - | 30W (Tc) | 150°C (TJ) | - | - | Surface Mount | LFPAK |
|
IRF740STRRPBFMOSFET N-CH 400V 10A D2PAK |
6,196 | - |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
NTMFS4C020NT3GMOSFET N-CH 30V 47A/303A 5DFN |
5,014 | - |
|
Datasheet |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 47A (Ta), 303A (Tc) | 4.5V, 10V | 0.7mOhm @ 30A, 10V | 2.2V @ 250µA | 139 nC @ 10 V | ±20V | 10144 pF @ 15 V | - | 3.2W (Ta), 134W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.