FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AOB20C60MOSFET N-CH 600V 20A TO263 |
3,726 | - |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 3440 pF @ 100 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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AOD4160MOSFET N-CH TO-252 |
7,003 | - |
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- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252 (DPAK) |
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AOI452AMOSFET N-CH 25V 55A TO251A |
5,840 | - |
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Datasheet |
SDMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 55A (Tc) | 4.5V, 10V | 7.3mOhm @ 20A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 1450 pF @ 12.5 V | - | 3.2W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-251A |
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AON7548MOSFET N-CH 30V 24A 8DFN |
6,193 | - |
|
Datasheet |
AlphaMOS | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 8.8mOhm @ 20A, 10V | 2.5V @ 250µA | 22 nC @ 10 V | ±20V | 1086 pF @ 15 V | - | 3.1W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN-EP (3x3) |
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AOY516MOSFET N-CH 30V 46A TO251B |
3,443 | - |
|
Datasheet |
AlphaMOS | TO-251-3 Stub Leads, IPAK | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 46A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.6V @ 250µA | 33 nC @ 10 V | ±20V | 1333 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-251B |
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TPH3202PSGANFET N-CH 600V 9A TO220AB |
4,635 | - |
|
Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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TPH3202LDGANFET N-CH 600V 9A 4PQFN |
2,850 | - |
|
Datasheet |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PQFN (8x8) |
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TPH3206LDGANFET N-CH 600V 17A PQFN |
6,343 | - |
|
Datasheet |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PQFN (8x8) |
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TPH3208PSGANFET N-CH 650V 20A TO220AB |
5,167 | - |
|
Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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TPH3208LDGANFET N-CH 650V 20A 4PQFN |
4,804 | - |
|
Datasheet |
- | 4-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-PQFN (8x8) |
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TPH3207WSGANFET N-CH 650V 50A TO247-3 |
6,522 | - |
|
Datasheet |
- | TO-247-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 50A (Tc) | 10V | 41mOhm @ 32A, 8V | 2.65V @ 700µA | 42 nC @ 8 V | ±18V | 2197 pF @ 400 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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TPH3202PDGANFET N-CH 600V 9A TO220AB |
8,196 | - |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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TPH3202LSGANFET N-CH 600V 9A 3PQFN |
3,416 | - |
|
Datasheet |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
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TPH3208PDGANFET N-CH 650V 20A TO220AB |
6,493 | - |
|
Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-220AB |
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TPH3208LSGANFET N-CH 650V 20A 3PQFN |
4,216 | - |
|
Datasheet |
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
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64-0055PBFMOSFET N-CH 60V 160A TO220AB |
7,602 | - |
|
Datasheet |
HEXFET® | - | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 160A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | - |
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TPH3205WSBGANFET N-CH 650V 36A TO247-3 |
7,363 | - |
|
Datasheet |
- | TO-247-3 | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 36A (Tc) | 10V | 60mOhm @ 22A, 8V | 2.6V @ 700µA | 42 nC @ 8 V | ±18V | 2200 pF @ 400 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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IRFC3004EBMOSFET N-CH WAFER |
4,010 | - |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFC3205ZEBMOSFET N-CH WAFER |
3,961 | - |
|
Datasheet |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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IRFC3206EBMOSFET N-CH WAFER |
5,778 | - |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
FETs, MOSFETs Electronic Components Sourcing and Lifecycle Support
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
How FPGAX Supports FETs, MOSFETs Requirements
- Active component sourcing: support for current FPGA, programmable logic, and related semiconductor requirements.
- End-of-life sourcing: assistance with obsolete and hard-to-find parts when designs must remain in production.
- Lifecycle management: sourcing support during product transitions, allocation periods, and supply interruptions.
- Design continuity: long-term supply support intended to reduce redesign pressure and production disruption.
- Major programmable logic brands: sourcing coverage includes Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic.
Supply Support at a Glance
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
Focused on FPGA and Programmable Logic Supply
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
FETs, MOSFETs FAQ
Can FPGAX source both active and end-of-life FETs, MOSFETs components?
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Which programmable logic manufacturers does FPGAX support?
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
How does FPGAX help with component lifecycle changes?
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
What quality and traceability standards does FPGAX follow?
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
What information should I provide for a FETs, MOSFETs sourcing request?
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.