FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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H5N2513PL-EN-CHANNEL POWER MOSFET |
1,189 | - |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G3R40MT12JSIC MOSFET N-CH 75A TO263-7 |
421 | - |
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Datasheet |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.7V @ 18mA (Typ) | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 374W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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FCH085N80-F155MOSFET N-CH 800V 46A TO247 |
437 | - |
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Datasheet |
SuperFET® II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 46A (Tc) | 10V | 85mOhm @ 23A, 10V | 4.5V @ 4.6mA | 255 nC @ 10 V | ±20V | 10825 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NVBGS4D1N15MCMOSFET N-CH 150V 20A/185A D2PAK |
364 | - |
|
Datasheet |
- | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 20A (Ta), 185A (Tc) | 8V, 10V | 4.1mOhm @ 104A, 10V | 4.5V @ 574µA | 88.9 nC @ 10 V | ±20V | 7285 pF @ 75 V | - | 3.7W (Ta), 316W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
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S3M0025120TMOSFET SILICON CARBIDE SIC 1200V |
200 | - |
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Datasheet |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
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H5N5011PL-EN-CHANNEL POWER MOSFET |
1,086 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G2R1000MT33JSIC MOSFET N-CH 4A TO263-7 |
1,853 | - |
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Datasheet |
G2R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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FCA76N60NMOSFET N-CH 600V 76A TO3PN |
1,348 | - |
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Datasheet |
SupreMOS™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 36mOhm @ 38A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±30V | 12385 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
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E3M0045065KSIC, MOSFET, 45M, 650V, TO-247-4 |
359 | - |
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Datasheet |
E | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 64 nC @ 15 V | +19V, -8V | 1593 pF @ 400 V | - | 150W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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C3M0032120J2-TRMOSFET N-CH 1200V 68A TO263 |
575 | - |
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C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | - | 3.6V @ 11.5mA | 111 nC @ 15 V | -8V, +19V | 3424 pF @ 1000 V | - | 277W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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4AK17-91N-CHANNEL POWER MOSFET |
29,649 | - |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF12040J-7SICFET N-CH 1200V 45A TO-263-7L |
278 | - |
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Datasheet |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tc) | 15V, 18V | 56mOhm @ 20A, 18V | 2.5V @ 40mA (Typ) | 117 nC @ 800 V | +18V, -8V | 3129 pF @ 800 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
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IXFT16N120PMOSFET N-CH 1200V 16A TO268 |
349 | - |
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Datasheet |
HiPerFET™, Polar | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 950mOhm @ 500mA, 10V | 6.5V @ 1mA | 120 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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HF9969-91AUTOMOTIVE POWER MOSFET |
2,400 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXFK110N07MOSFET N-CH 70V 110A TO264AA |
1,225 | - |
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Datasheet |
HiPerFET™ | TO-264-3, TO-264AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 70 V | 110A (Tc) | 10V | 6mOhm @ 55A, 10V | 4V @ 8mA | 480 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IGO60R070D1AUMA1GANFET N-CH 600V 31A 20DSO |
7,476 | - |
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Datasheet |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-85 |
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2SK1971-EN-CHANNEL POWER MOSFET |
1,331 | - |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2SK1947-EN-CHANNEL POWER MOSFET |
446 | - |
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Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SCTWA30N120IC POWER MOSFET 1200V HIP247 |
294 | - |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.5V @ 1mA (Typ) | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | HiP247™ Long Leads |
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AS1M025120PN-CHANNEL SILICON CARBIDE POWER |
124 | - |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 195 nC @ 20 V | +25V, -10V | 3600 pF @ 1000 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
FETs, MOSFETs Electronic Components Sourcing and Lifecycle Support
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
How FPGAX Supports FETs, MOSFETs Requirements
- Active component sourcing: support for current FPGA, programmable logic, and related semiconductor requirements.
- End-of-life sourcing: assistance with obsolete and hard-to-find parts when designs must remain in production.
- Lifecycle management: sourcing support during product transitions, allocation periods, and supply interruptions.
- Design continuity: long-term supply support intended to reduce redesign pressure and production disruption.
- Major programmable logic brands: sourcing coverage includes Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic.
Supply Support at a Glance
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
Focused on FPGA and Programmable Logic Supply
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
FETs, MOSFETs FAQ
Can FPGAX source both active and end-of-life FETs, MOSFETs components?
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Which programmable logic manufacturers does FPGAX support?
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
How does FPGAX help with component lifecycle changes?
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
What quality and traceability standards does FPGAX follow?
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
What information should I provide for a FETs, MOSFETs sourcing request?
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.