FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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RJK5013DPP-00#T2RJK5013DPP - N CHANNEL MOSFET |
2,494 | - |
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Datasheet |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Ta) | 10V | 465mOhm @ 7A, 10V | 4.5V @ 1mA | 38 nC @ 10 V | ±30V | 1450 pF @ 25 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220FN |
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AC3M0060065KSIC MOSFET N-CH 650V 38A TO247-4 |
10,000 | - |
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Datasheet |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 150W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0060065DSIC MOSFET N-CH 650V 30A TO247-3 |
10,000 | - |
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Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 150W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AUIRFSL8407MOSFET N-CH 40V 195A TO262 |
1,288 | - |
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Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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RJK5014DPP-E0#T2RJK5014DPP-E0#T2 - SILICON N CHA |
12,236 | - |
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Datasheet |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Ta) | 10V | 390mOhm @ 9.5A, 10V | 4.5V @ 1mA | 46 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220FP |
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FL06150GSICFET N-CH 650V 15A PDFN8x8 |
300 | - |
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Datasheet |
Lightning | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 15A (Tc) | 15V | 150mOhm @ 5A, 15V | 2V @ 8mA | 29.5 nC @ 12 V | 15V | 672 pF @ 400 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PDFN (8x8) |
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FDMF6808NDRMOS MODULE |
3,000 | - |
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- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NP110N055PUJ-E1B-AYNP110N055PUJ-E1B-AY - SWITCHINGN |
1,000 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 2.4mOhm @ 55A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 14250 pF @ 25 V | - | 1.8W (Ta), 288W (Tc) | 175°C | - | - | Surface Mount | TO-263-3 |
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QS1700SCM81700v 8AMP SiC Mosfet |
2,500 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 8A | 20V | 100mOhm @ 2A, 20V | 4V @ 10mA | 16 nC @ 1200 V | - | 142 pF @ 1000 V | - | 88W | -55°C ~ 175°C | Automotive | - | Through Hole | PG-TO247-3 |
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RJL5014DPP-E0#T2RJL5014DPP-E0#T2 - SILICON N CHA |
2,240 | - |
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- |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Ta) | 10V | 400mOhm @ 9.5A, 10V | 4V @ 1mA | 43 nC @ 10 V | ±30V | 1700 pF @ 25 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220FP |
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AUIRF1404AUIRF1404 - 20V-40V N-CHANNEL AU |
24,709 | - |
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Datasheet |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196 nC @ 10 V | ±20V | 5669 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRF1404AUIRF1404 - 20V-40V N-CHANNEL AU |
9,000 | - |
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Datasheet |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196 nC @ 10 V | ±20V | 5669 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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GC041N65QFMOSFET N-CH 650V 70A TO-247 |
3,000 | - |
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Datasheet |
- | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 43mOhm @ 20A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±30V | 7668 pF @ 400 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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AC3M0045065DSIC MOSFET N-CH 650V 50A TO247-3 |
10,000 | - |
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Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | - | +19V, -8V | - | - | 176W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0045065KSIC MOSFET N-CH 650V 50A TO247-4 |
10,000 | - |
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Datasheet |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | - | +19V, -8V | - | - | 176W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC3M0040120KSIC MOSFET N-CH 1200V 67A TO247- |
10,000 | - |
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Datasheet |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 67A | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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AC2M0040120DSIC MOSFET N-CH 1200V 57A TO247- |
10,000 | - |
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Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | - | +25V, -10V | - | - | 278W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0040120DSIC MOSFET N-CH 1200V 67A TO247- |
10,000 | - |
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Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 67A | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.5mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0032120DSIC MOSFET N-CH 1200V 64A TO247- |
10,000 | - |
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Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | - | +19V, -8V | - | - | 283W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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AC3M0065090DSIC MOSFET N-CH 900V 37A TO247-3 |
10,000 | - |
|
Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 37A | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | - | +19V, -8V | - | - | 125W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
FETs, MOSFETs Electronic Components Sourcing and Lifecycle Support
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
How FPGAX Supports FETs, MOSFETs Requirements
- Active component sourcing: support for current FPGA, programmable logic, and related semiconductor requirements.
- End-of-life sourcing: assistance with obsolete and hard-to-find parts when designs must remain in production.
- Lifecycle management: sourcing support during product transitions, allocation periods, and supply interruptions.
- Design continuity: long-term supply support intended to reduce redesign pressure and production disruption.
- Major programmable logic brands: sourcing coverage includes Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic.
Supply Support at a Glance
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
Focused on FPGA and Programmable Logic Supply
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
FETs, MOSFETs FAQ
Can FPGAX source both active and end-of-life FETs, MOSFETs components?
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Which programmable logic manufacturers does FPGAX support?
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
How does FPGAX help with component lifecycle changes?
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
What quality and traceability standards does FPGAX follow?
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
What information should I provide for a FETs, MOSFETs sourcing request?
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.