| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK28E65W,S1XPB-F POWER MOSFET TRANSISTOR TO- |
3,966 | - |
|
Datasheet |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C | - | - | Through Hole | TO-220 |
|
TK25E60X5,S1XMOSFET N-CH 600V 25A TO220 |
100 | - |
|
Datasheet |
DTMOSIV-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
TK25N60X5,S1FMOSFET N-CH 600V 25A TO247 |
2,676 | - |
|
Datasheet |
DTMOSIV-H | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
TK20E60W,S1VXMOSFET N-CH 600V 20A TO220 |
1,069 | - |
|
Datasheet |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
TK110N65Z,S1FPOWER MOSFET TRANSISTOR TO-247(O |
3,796 | - |
|
Datasheet |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
IPA65R110CFDXKSA2MOSFET N-CH 650V 31.2A TO220 |
3,142 | - |
|
Datasheet |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
TK28N65W,S1FMOSFET N-CH 650V 27.6A TO247 |
4,695 | - |
|
Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
TK20N60W,S1VFMOSFET N-CH 600V 20A TO247 |
4,533 | - |
|
Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
AIMCQ120R160M1TXTMA1SIC_DISCRETE |
100 | - |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 18.6A (Tc) | 18V, 20V | 200mOhm @ 5A, 20V | 5.1V @ 1.5mA | 14 nC @ 20 V | +25V, -10V | 350 pF @ 800 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
SCT055TO65G3SILICON CARBIDE POWER MOSFET 650 |
3,439 | - |
|
Datasheet |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AIMCQ120R120M1TXTMA1SIC_DISCRETE |
100 | - |
|
- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 24A (Tc) | 18V, 20V | 150mOhm @ 7A, 20V | 5.1V @ 2.2mA | 18 nC @ 20 V | +25V, -10V | 458 pF @ 800 V | - | 161W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
IMZC120R078M2HXKSA1IMZC120R078M2HXKSA1 |
2,201 | - |
|
Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 28A (Tc) | 15V, 18V | 78mOhm @ 9A, 18V | 5.1V @ 2.8mA | 21 nC @ 18 V | +23V, -7V | 700 pF @ 800 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
TK31E60W,S1VXMOSFET N-CH 600V 30.8A TO220 |
4,189 | - |
|
Datasheet |
DTMOSIV | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
PSMN1R1-100CSEJPSMN1R1-100CSE/SOT8005A/CCPAK1 |
4,043 | - |
|
Datasheet |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 430A (Tc) | 10V | 1.09mOhm @ 25A, 10V | 3.6V @ 1mA | 509 nC @ 10 V | ±20V | 36460 pF @ 50 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212i |
|
IPQC60T040S7AXTMA1AUTOMOTIVE_COOLMOS |
1,420 | - |
|
- |
CoolMOS™ | 22-PowerBSOP Module | Box | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 780µA | 83 nC @ 12 V | ±20V | 3128 pF @ 300 V | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
TK35N65W5,S1FMOSFET N-CH 650V 35A TO247 |
2,525 | - |
|
Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
TW107Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 10 |
3,882 | - |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 20A (Tc) | 18V | 152mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
TK31J60W5,S1VQMOSFET N-CH 600V 30.8A TO3P |
2,808 | - |
|
Datasheet |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
|
STW65N045M9-4N-CHANNEL 650 V, 39 MOHM TYP., 5 |
3,809 | - |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 45mOhm @ 28A, 10V | 4.2V @ 250µA | 80 nC @ 10 V | ±30V | 4610 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
SCT040TO65G3SILICON CARBIDE POWER MOSFET 650 |
100 | - |
|
Datasheet |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.