FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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GPI65007DF56GaNFET N-CH 650V 7A DFN5x6 |
3,506 | - |
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Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 7A | 6V | - | 1.5V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 76.1 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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FCH110N65F-F155MOSFET N-CH 650V 35A TO247 |
3,467 | - |
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Datasheet |
FRFET®, SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 110mOhm @ 17.5A, 10V | 5V @ 3.5mA | 145 nC @ 10 V | ±20V | 4895 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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CC-C2-B15-0322SiC Power MOSFET 1200V 12A |
2,543 | - |
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Datasheet |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Ta) | 15V | 135mOhm @ 10A, 15V | 3.2V @ 5mA | 40 nC @ 15 V | +15V, -5V | 1810 pF @ 200 V | - | 100W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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FCH043N60POWER FIELD-EFFECT TRANSISTOR, 7 |
3,600 | - |
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Datasheet |
SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 43mOhm @ 38A, 10V | 3.5V @ 250µA | 215 nC @ 10 V | ±20V | 12225 pF @ 400 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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NC1M120C75HTNGSiC MOSFET N 1200V 75mohm 47A 4 |
100 | - |
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Datasheet |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.8V @ 5mA | - | +20V, -5V | 1450 pF @ 1000 V | - | 288W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC1M120C75RRNGSiC MOSFET N 1200V 75mohm 46A 7 |
100 | - |
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Datasheet |
NC1M | TO-263-8, DPak (7 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 46A (Tc) | 18V | 75mOhm @ 20A, 18V | 2.3V @ 5mA | - | +18V, -5V | 1402 pF @ 1000 V | - | 240W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7L |
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IRFF130Power Field-Effect Transistor, 8 |
2,158 | - |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NC1M120C40GTNGSiC MOSFET N 1200V 40mohm 76A 3 |
100 | - |
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Datasheet |
NC1M | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 76A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 375W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
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NC1M120C40HTNGSiC MOSFET N 1200V 40mohm 75A 4 |
100 | - |
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Datasheet |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 366W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC1M120C35HTNGSIC MOSFET 1200V 35M 75A TO247- |
100 | - |
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Datasheet |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 75A (Tc) | - | 50mOhm @ 33.3A, 18V | 4.5V @ 15mA | 190 nC @ 18 V | +18V, -5V | 2834 pF @ 1 kV | - | 386W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC2M120C20HTNGSIC MOSFET 1200V 20M 126A TO247 |
100 | - |
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Datasheet |
NC2M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 126A (Tc) | - | 30mOhm @ 63A, 20V | 4.5V @ 20mA | 282 nC @ 20 V | +20V, -5V | 4615 pF @ 1 kV | - | 625W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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AMTP65H150G4LSGBGAN FET N-CH 650V 13A DFN8X8 |
3,169 | - |
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Datasheet |
- | 4-PowerTSFN | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 10A, 10V | 1V @ 250µA | 8.8 nC @ 6 V | ±18V | 760 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-DFN (8x8) |
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BSS123MOSFET N-CH 100V 170MA SOT23-3 |
9,485 | - |
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Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170mA | 4.5V, 10V | 5Ohm @ 200mA, 10V | 2.5V @ 250µA | 1.8 nC @ 10 V | ±20V | 14 pF @ 25 V | - | 350mW (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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SSM3J327R,LFMOSFET P-CH 20V 3.9A SOT23F |
6,138 | - |
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Datasheet |
U-MOSVI | SOT-23-3 Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | SOT-23F |
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AON7407MOSFET P-CH 20V 14.5A/40A 8DFN |
8,237 | - |
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Datasheet |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 14.5A (Ta), 40A (Tc) | 1.8V, 4.5V | 9.5mOhm @ 14A, 4.5V | 900mV @ 250µA | 53 nC @ 4.5 V | ±8V | 4195 pF @ 10 V | - | 3.1W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN-EP (3x3) |
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NTLJS3D0N02P8ZTAGMOSFET N-CH 20V 12.1A 6PQFN |
4,768 | - |
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Datasheet |
- | 6-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 12.1A (Ta) | 1.8V, 4.5V | 3.8mOhm @ 10A, 4.5V | 1.2V @ 250µA | 21 nC @ 4.5 V | ±12V | 2165 pF @ 10 V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-PQFN (2x2) |
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NTD3055L104T4GMOSFET N-CH 60V 12A DPAK |
5,130 | - |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Ta) | 5V | 104mOhm @ 6A, 5V | 2V @ 250µA | 20 nC @ 5 V | ±15V | 440 pF @ 25 V | - | 1.5W (Ta), 48W (Tj) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | DPAK |
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IRF7821TRPBFMOSFET N-CH 30V 13.6A 8SO |
9,346 | - |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | 1010 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF540ZPBFMOSFET N-CH 100V 36A TO220AB |
5,343 | - |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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STN1NK80ZMOSFET N-CH 800V 250MA SOT223 |
4,675 | - |
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Datasheet |
SuperMESH™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 250mA (Tc) | 10V | 16Ohm @ 500mA, 10V | 4.5V @ 50µA | 7.7 nC @ 10 V | ±30V | 160 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
FETs, MOSFETs Electronic Components Sourcing and Lifecycle Support
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
How FPGAX Supports FETs, MOSFETs Requirements
- Active component sourcing: support for current FPGA, programmable logic, and related semiconductor requirements.
- End-of-life sourcing: assistance with obsolete and hard-to-find parts when designs must remain in production.
- Lifecycle management: sourcing support during product transitions, allocation periods, and supply interruptions.
- Design continuity: long-term supply support intended to reduce redesign pressure and production disruption.
- Major programmable logic brands: sourcing coverage includes Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic.
Supply Support at a Glance
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
Focused on FPGA and Programmable Logic Supply
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
FETs, MOSFETs FAQ
Can FPGAX source both active and end-of-life FETs, MOSFETs components?
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Which programmable logic manufacturers does FPGAX support?
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
How does FPGAX help with component lifecycle changes?
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
What quality and traceability standards does FPGAX follow?
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
What information should I provide for a FETs, MOSFETs sourcing request?
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.