| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IQFH39N04NM6ATMA1TRENCH <= 40V |
2,674 | - |
|
Datasheet |
OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 63A (Ta), 600A (Tc) | 6V, 10V | 0.39mOhm @ 100A, 10V | 2.8V @ 1.05mA | 273 nC @ 10 V | ±20V | 16400 pF @ 20 V | - | 3W (Ta), 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-12-1 |
|
TK35A65W5,S5XMOSFET N-CH 650V 35A TO220SIS |
4,145 | - |
|
Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
SIHG125N65E-GE3E SERIES POWER MOSFET 650 V (D- |
3,526 | - |
|
Datasheet |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IGLT65R110D2ATMA1IGLT65R110D2ATMA1 |
7,608 | - |
|
Datasheet |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A (Tc) | - | - | 1.6V @ 1.3mA | 2.4 nC @ 3 V | -10V | 170 pF @ 400 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
|
IPP022N12NM6AKSA1TRENCH >=100V |
9,464 | - |
|
Datasheet |
OptiMOS™ 6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 29A (Ta), 203A (Tc) | 8V, 10V | 2.2mOhm @ 100A, 10V | 3.6V @ 275µA | 141 nC @ 10 V | ±20V | 11000 pF @ 60 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
SIHK100N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- |
6,498 | - |
|
Datasheet |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
|
CCSPG1560N TR PBFREESURFACE MOUNT MOSFET |
2,095 | - |
|
- |
- | 25-PowerVFQFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 150 V | 60A (Tj) | 5V | 7mOhm @ 20A, 5V | 2.1V @ 7mA | 13 nC @ 5 V | +6V, -4V | 1450 pF @ 75 V | - | 200mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 25-CSP (4x6) |
|
G3F320MT12J-TR1200V 320M TO-263-7 G3F SIC MOSF |
4,982 | - |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TK31A60W,S4VXMOSFET N-CH 600V 30.8A TO220SIS |
2,151 | - |
|
Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
SIHP100N65E-GE3E SERIES POWER MOSFET 650 V (D- |
8,627 | - |
|
Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIHB100N65E-GE3E SERIES POWER MOSFET 650 V (D- |
2,191 | - |
|
Datasheet |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
DIW065SIC080SIC MOSFET, TO-247-3L, N, 36A, 6 |
7,072 | - |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 36A (Tc) | 18V | 80mOhm @ 15A, 18V | 4V @ 5mA | 75 nC @ 20 V | +18V, -5V | 1480 pF @ 600 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
EPC2304TRANS GAN 200V .005OHM 7QFN |
2,787 | - |
|
- |
eGaN® | 7-PowerWQFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 102A (Ta) | 5V | 3.1mOhm @ 32A, 5V | 2.5V @ 8mA | 24 nC @ 5 V | +6V, -4V | 3195 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 7-QFN (3x5) |
|
AUIRF7799L2TRMOSFET N-CH 250V 375A DIRECTFET |
6,719 | - |
|
Datasheet |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165 nC @ 10 V | ±30V | 6714 pF @ 25 V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
IMBG65R040M2HXTMA1SILICON CARBIDE MOSFET |
7,236 | - |
|
Datasheet |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 49A (Tc) | 15V, 20V | 49mOhm @ 22.9A, 18V | 5.6V @ 4.6mA | 28 nC @ 18 V | +23V, -7V | 997 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
TK040N60Z1,S1F600V DTMOS6 TO-247 40MOHM |
6,022 | - |
|
Datasheet |
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Ta) | 10V | 400mOhm @ 21.2A, 10V | 4V @ 2.4mA | 85 nC @ 10 V | ±30V | 5200 pF @ 300 V | - | 297W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
SIHH100N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- |
6,404 | - |
|
Datasheet |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
G3F60MT06L-TR650V 55M TO-LL G3F SIC MOSFET |
3,954 | - |
|
- |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 48A (Tc) | 15V, 18V | 75mOhm @ 15A, 18V | 4.3V @ 7mA | 45 nC @ 18 V | +22V, -10V | 1322 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
|
IPQC60R040S7XTMA1MOSFET |
6,559 | - |
|
Datasheet |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | - | - | 272W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
|
IMW65R060M2HXKSA1IMW65R060M2HXKSA1 |
2,932 | - |
|
Datasheet |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 32.8A (Tc) | 15V, 20V | 55mOhm @ 15.4A, 20V | 5.6V @ 3.1mA | 19 nC @ 18 V | +23V, -7V | 669 pF @ 400 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
FPGAX is a global sourcing partner specializing in FPGA and programmable logic solutions for engineering and manufacturing organizations worldwide. For customers sourcing FETs, MOSFETs components, we support both current production requirements and long-term component availability across demanding product lifecycles.
Our sourcing approach combines traceability, supply stability, and technical coordination. FPGAX is certified to AS9120B, ISO 9001:2008, and ISO 14001 standards and supports procurement programs where continuity, documentation, and dependable component supply are important.
| Requirement | FPGAX Support |
| Current production | Active FPGA, programmable logic, and semiconductor component sourcing |
| Legacy programs | End-of-life and hard-to-find component sourcing |
| Supply continuity | Lifecycle transition and long-term availability support |
| Quality requirements | Traceable sourcing and quality-management processes |
FPGAX focuses on helping customers maintain access to critical programmable devices throughout the full component lifecycle. Whether the requirement is for a current design, an established production program, or an older platform facing component obsolescence, our goal is to provide a stable sourcing path and help customers maintain design and manufacturing continuity.
Yes. FPGAX supports sourcing for both active components and end-of-life or hard-to-find parts, with an emphasis on maintaining supply continuity for engineering and manufacturing programs.
Our core sourcing coverage includes major FPGA and programmable logic manufacturers such as Xilinx, Intel/Altera, Lattice, Microchip, and QuickLogic, subject to specific part requirements and availability.
We support customers through lifecycle transitions by helping locate current or legacy supply, reducing exposure to supply disruptions, and supporting long-term availability for designs that need to remain in production.
FPGAX states certification to AS9120B, ISO 9001:2008, and ISO 14001 standards. Our sourcing services are structured around traceability, stable supply, and quality-management requirements.
Providing the manufacturer part number, required quantity, target delivery schedule, and any lifecycle or traceability requirements helps us evaluate the sourcing request more efficiently.