FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Results:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G58N06FN60V, 35A,RD<13M@10V,VTH1.0V~2.4 Goford Semiconductor |
100 | - |
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Datasheet |
TrenchFET® | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 2.4V @ 250µA | 75 nC @ 10 V | ±20V | 30006 pF @ 30 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT130N10FMOSFET N-CH 100V 45A TO-220F Goford Semiconductor |
1,970 | - |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 1215 pF @ 50 V | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT180N12MMOSFET N-CH 120V 55A 96W TO-263 Goford Semiconductor |
800 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 55A (Tc) | 10V | 17mOhm @ 20A, 10V | 3.7V @ 250µA | 22 nC @ 10 V | ±20V | 1635 pF @ 60 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G20P08KP-80V,RD(MAX)<62M@-10V,RD(MAX)<7 Goford Semiconductor |
3,539 | - |
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Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 20A (Tc) | 4.5V, 10V | 62mOhm @ 10A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 3500 pF @ 30 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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630ATN200V,RD(MAX)<250M@10V,RD(MAX)<3 Goford Semiconductor |
2,480 | - |
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Datasheet |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 4.5V, 10V | 250mOhm @ 1A, 10V | 2.2V @ 250µA | 11.8 nC @ 10 V | ±20V | 509 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT105N10MMOSFET N-CH 100V 60A 83W TO-263 Goford Semiconductor |
800 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 11mOhm @ 20A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±20V | 1675 pF @ 50 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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18N20FN200V, 18A,RD<0.19@10V,VTH1.0V~3 Goford Semiconductor |
4,409 | - |
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Datasheet |
TrenchFET® | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 3V @ 250µA | 18 nC @ 10 V | ±20V | 852 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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G18N20TMOSFET N-CH 200V 18A 110W 190M(M Goford Semiconductor |
4,690 | - |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 31 nC @ 5 V | ±30V | 1120 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G048N04TMOSFET N-CH 40V 150A TO-220 Goford Semiconductor |
2,542 | - |
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Datasheet |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 10V | 3.3Ohm @ 50A, 10V | 2.5V @ 250µA | 117 nC @ 10 V | ±20V | 6561 pF @ 20 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G075N06MMOSFET N-CH 60V 110A 160W TO-263 Goford Semiconductor |
800 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 10V | 7mOhm @ 20A, 10V | 3V @ 250µA | 90 nC @ 10 V | ±20V | 6443 pF @ 30 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |