FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Results:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT038P06MMOSFET P-CH 60V 200A 350W TO-26 Goford Semiconductor |
3,196 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 200A (Tc) | 4.5V, 10V | 4.5mOhm @ 50A, 10V | 2.5V @ 250µA | 386 nC @ 10 V | ±20V | 11988 pF @ 30 V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT035N10MN100V, 190A,RD<3.5M@10V,VTH2V~4V Goford Semiconductor |
3,651 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 10V | 3.5mOhm @ 20A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 6188 pF @ 50 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT035N10QMOSFET N-CH 100V 190A TO-247 Goford Semiconductor |
1,672 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 10V | 3.5mOhm @ 30A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 6516 pF @ 50 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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GC120N65QFMOSFET N-CH 650V 30A TO-247 Goford Semiconductor |
4,838 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 120mOhm @ 38A, 10V | 5V @ 250µA | 68 nC @ 10 V | ±30V | 3100 pF @ 275 V | - | 96.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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GC080N65QFMOSFET N-CH 650V 50A TO-247 Goford Semiconductor |
3,952 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 80mOhm @ 16A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±30V | 4900 pF @ 380 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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GC030N65QFMOSFET N-CH 650V 80A TO-247 Goford Semiconductor |
4,374 | - |
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Datasheet |
- | - | Tube | Active | - | MOSFET (Metal Oxide) | - | 80A (Tc) | 10V | 30mOhm @ 20A, 10V | 5V @ 250µA | 240 nC @ 10 V | ±30V | 9500 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-247-3 |
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G75P04TMOSFET P-CH 40V 70A TO-220 Goford Semiconductor |
1,000 | - |
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Datasheet |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 70A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G08N02LN20V, 8A, RD<[email protected],VTH0.5V~ Goford Semiconductor |
8,946 | - |
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Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 2.5V, 4.5V | 12.3mOhm @ 12A, 4.5V | 900mV @ 250µA | 22 nC @ 10 V | ±12V | 929 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 | |
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G06N02HN20V, 6A, RD<[email protected],VTH0.5V~ Goford Semiconductor |
2,096 | - |
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Datasheet |
- | TO-261-4, TO-261AA | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 2.5V, 4.5V | 14.3mOhm @ 3A, 4.5V | 900mV @ 250µA | 12.5 nC @ 10 V | ±12V | 1140 pF @ 10 V | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 | |
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G08N03D2N30V,8A,RD<20M@10V,VTH1.0V~2.0V, Goford Semiconductor |
8,365 | - |
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Datasheet |
- | 6-WDFN Exposed Pad | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 4A, 10V | 2V @ 250µA | 15 nC @ 10 V | ±20V | 681 pF @ 15 V | - | 17W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |